?2004 osaoptolightgmbh?tel.+49(0)3065762683? fax+49(0)3065762681?contact@osaopto.com red item no.: 101205 1. thisspecificationappliestogaasp/gaasledc hips 2. structure 2.1 planarstructure 2.2 electrodes pside(anode) al nside(cathode) aualloy 3. outlines(dimensionsinmicrons) 4. electricalandopticalcharacteristics(t=25c) parameter symbol conditions min typ max unit forwardvoltage v f i f =20ma 1,65 1,84 v reversevoltage v r i r =10a 5 v luminousintensity* i v i f =20ma 300 600 cd peakwavelength l p i f =20ma 660 nm *onrequest,waferswillbedeliveredaccordingt oluminousintensityclasses brightnessmeasurementatosaongoldplate 5. packing diceonadhesivefilmwithwirebondsideontop 6. labeling type lotno. i v typ quantity min max pdiffusion 300 nelectrode 300 300 120 isolator nepitaxygaasp p electrode nsubstrategaas
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